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| TCDT1120(G) Series Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: nc Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. C 5 E 4 6 VDE Standards 94 9222 These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler for electrical safety requirements 1 A (+) 2 C (-) 3 nc D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCDT1120/ TCDT1120G >40% TCDT1122/ TCDT1122G1) 63 to 125% TCDT1123/ TCDT1123G1) 100 to 200% 1) TCDT1124/ TCDT1124G 160 to 320% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 224 Rev. A3, 11-Jan-99 TCDT1120(G) Series Vishay Telefunken Features Approvals: D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Base not connected D CTR offered in 4 groups D Coupling System A D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCBO VCEO VECO IC ICM PV Tj Value 5 60 3 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 90 90 7 50 100 150 125 Unit V V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mW C C C 2 mm from case, t 10 s Rev. A3, 11-Jan-99 225 TCDT1120(G) Series Vishay Telefunken Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 100 mA IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol VCBO VCEO VECO ICEO Min. 90 90 7 Typ. Max. Unit V V V nA 150 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 1 mA Type TCDT1120(G) TCDT1122(G) TCDT1123(G) TCDT1124(G) TCDT1120(G) TCDT1122(G) TCDT1123(G) TCDT1124(G) Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.10 0.15 0.30 0.60 0.40 0.63 1 1.60 Typ. Max. Unit VCE = 5 V, IF = 10 mA 1.25 2.00 3.20 226 Rev. A3, 11-Jan-99 TCDT1120(G) Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage - 100%, ttest = 1 s Routine test Partial discharge test voltage - tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb 100C VIO = 500 V, Tamb 150C (construction test only) 300 Psi 250 200 VPd (mW) Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 150 100 Isi (mA) 50 0 0 95 10934 VIOWM VIORM 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 25 50 75 100 125 150 175 200 Tamb ( C ) 13930 Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11-Jan-99 227 TCDT1120(G) Series Vishay Telefunken Switching Characteristics of TCDT1120(G) and TCDT1122(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ( (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 3.7 0.3 5.5 4.0 16.5 22.5 Unit VS = 5 V, IC = 10 mA, RL = 1 kW ( (see figure 4) g ) ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms ms Switching Characteristics of TCDT1123(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ( (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.8 4.2 4.7 0.3 7.0 5.0 21.0 37.5 Unit VS = 5 V, IC = 10 mA, RL = 1 kW ( (see figure 4) g ) Switching Characteristics of TCDT1124(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ( (see figure 3) g ) VS = 5 V, IC = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol td tr tf ts ton toff ton toff IF = 10 mA +5V IC Typ. 2.0 4.0 4.7 0.3 6.0 5.0 20.0 50.0 Unit 0 IF +5V IC = 10 mA ; Adjusted through input amplitude 0 IF RG = 50 W tp 0.01 T tp = 50 ms RG = 50 W tp = 0.01 T tp = 50 ms + Channel I Channel II 50W 95 10848 100W Oscilloscope 1M RL W CL 20 pF 95 10843 w v Channel I 50 W Channel II 1 kW Oscilloscope RL 1 MW CL 20 pF Figure 3. Test circuit, non-saturated operation Figure 4. Test circuit, saturated operation 228 Rev. A3, 11-Jan-99 TCDT1120(G) Series Vishay Telefunken 96 11698 IF 0 tp IC 100% 90% t 10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf t storage time fall time turn-off time Figure 5. Switching times Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 I F - Forward Current ( mA ) 80 120 96 11862 1000.0 100.0 200 Phototransistor 150 IR-diode 100 50 0 0 40 10.0 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) Tamb - Ambient Temperature ( C ) 96 11700 Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 7. Forward Current vs. Forward Voltage Rev. A3, 11-Jan-99 229 TCDT1120(G) Series Vishay Telefunken 100 IC - Collector Current ( mA ) VCE=5V IF=10mA IF=50mA 20mA 10 10mA 5mA 1 CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C ) 2mA 1mA CNY75A 0.1 0.1 95 11041 1 10 100 96 11918 VCE - Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=30V IF=0 1000 Figure 11. Collector Current vs. Collector Emitter Voltage V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% 0.8 CNY75A 0.6 100 0.4 20% 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 10 1 0 95 11038 25 50 75 100 95 11034 Tamb - Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current ( mA ) VCE=5V 10 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) TCDT1122(G) VCE=5V 100 1 10 0.1 0.01 0.1 95 11040 1 1 10 100 14796 0.1 1 10 100 IF - Forward Current ( mA ) IF - Forward Current ( mA ) Figure 10. Collector Current vs. Forward Current Figure 13. Current Transfer Ratio vs. Forward Current 230 Rev. A3, 11-Jan-99 TCDT1120(G) Series Vishay Telefunken 1000 CTR - Current Transfer Ratio ( % ) TCDT1123(G) VCE=5V 100 50 TCDT1123(G) Saturated Operation VS=5V RL=1kW toff 20 10 ton 0 0.1 14797 t on / t off - Turn on / Turn off Time ( m s ) 100 147800 40 30 10 1 1 10 IF - Forward Current ( mA ) 0 5 10 15 20 IF - Forward Current ( mA ) Figure 14. Current Transfer Ratio vs. Forward Current 1000 CTR - Current Transfer Ratio ( % ) TCDT1124(G) VCE=5V 100 Figure 17. Turn on / off Time vs. Forward Current 50 TCDT1124(G) Saturated Operation VS=5V RL=1kW toff t on / t off - Turn on / Turn off Time ( m s ) 40 30 10 20 10 ton 0 0 5 10 15 20 1 0.1 14798 1 10 100 147801 IF - Forward Current ( mA ) IF - Forward Current ( mA ) Figure 15. Current Transfer Ratio vs. Forward Current 50 TCDT1122(G) Saturated Operation VS=5V RL=1kW toff 20 10 0 0 14799 Figure 18. Turn on / off Time vs. Forward Current 20 TCDT1122(G) Non Saturated Operation VS=5V RL=100W t on / t off - Turn on / Turn off Time ( m s ) 40 t on / t off - Turn on / Turn off Time ( m s ) 15 ton 10 toff 5 30 ton 20 0 5 10 15 0 147802 2 4 6 8 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current Figure 19. Turn on / off Time vs. Collector Current Rev. A3, 11-Jan-99 231 TCDT1120(G) Series Vishay Telefunken 20 TCDT1123(G) Non Saturated Operation VS=5V RL=100W 20 TCDT1124(G) Non Saturated Operation VS=5V RL=100W t on / t off - Turn on / Turn off Time ( m s ) 15 t on / t off - Turn on / Turn off Time ( m s ) 15 ton 10 toff 5 10 ton 5 toff 0 0 2 4 6 8 10 0 0 147804 2 4 6 8 10 147803 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 20. Turn on / off Time vs. Collector Current Figure 21. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 22. Marking example 232 Rev. A3, 11-Jan-99 TCDT1120(G) Series Vishay Telefunken Dimensions of TCDT112.G in mm weight: ca. 0.50 g creepage distance: air path:y 8 mm y 8 mm after mounting on PC board 14771 Dimensions of TCDT112. in mm weight: 0.50 g creepage distance: air path:y 6 mm y 6 mm after mounting on PC board 14770 Rev. A3, 11-Jan-99 233 |
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